Understanding and modeling the resistance of high aspect ratio FIB-fabricated tungsten vias

Journal of Materials Engineering and Performance

Volumn 19, Issue 6, 2010, Pages 900-905

  Niles, David W ^a   Dauksher, Walter ^a   Kee, Ronald W ^a  

^a BROADCOM CORPORATION   (United States)

Author keywords

advanced characterization; electronic materials; microelectronic failure analysis

Indexed keywords

ADVANCED CHARACTERIZATION; ANALYTICAL EXPRESSIONS; CIRCUIT EDIT; CLOSED FORM; CURRENT CROWDING; EFFECTIVE AREA; ELECTRICAL RESISTANCES; ELECTRONIC MATERIALS; FINITE ELEMENT; FINITE ELEMENT ANALYSIS; FOCUSED ION BEAM TECHNIQUE; HIGH ASPECT RATIO; M-LINES; MICROELECTRONIC FAILURE ANALYSIS; THEORETICAL FRAMEWORK; TRADITIONAL TECHNIQUES;

ASPECT RATIO; ELECTRIC NETWORK ANALYSIS; ELECTRIC RESISTANCE; FAILURE ANALYSIS; MICROELECTRONICS; QUALITY ASSURANCE; TUNGSTEN;

FINITE ELEMENT METHOD;

EID: 76449093885     PISSN: 10599495     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11665-009-9560-1     Document Type: Article

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