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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2728-2731

Focused ion beam-induced fabrication of tungsten structures

(6) Ishida, M a Fujita, J a,c Ichihashi, T a Ochiai, Y a Kaito, T b Matsui, S a

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b SEIKO INSTRUMENTS INC (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIFFUSION; ELASTIC MODULI; GROWTH (MATERIALS); HEAT TREATMENT; HEATING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS; VACUUM APPLICATIONS;

FOCUSED ION BEAM-INDUCED FABRICATION; RESONANT FREQUENCY; SURFACE DIFFUSION;

ION BEAMS;

EID: 0942267547 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1627806 Document Type: Conference Paper

Times cited : (71)

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