Nano-engineering with a focused helium ion beam

Materials Research Society Symposium Proceedings

Volumn 1354, Issue , 2012, Pages 33-46

  Maas, Diederik J ^a   Van Der Drift, Emile W ^b   Van Veldhoven, Emile ^a   Meessen, Jeroen ^c   Rudneva, Maria ^b   Alkemade, Paul F A ^b  

^a TNO   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c ASML   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM FOCUSED ION BEAMS; HELIUM ION MICROSCOPIES; HIGH-RESOLUTION IMAGING; ION BACKSCATTERING; MATERIALS ANALYSIS; NOVEL APPLICATIONS; SCANNING ELECTRON MICROSCOPY , SEM; SECONDARY ELECTRONS;

IMAGE RECONSTRUCTION; ION BEAMS; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY;

IONS;

EID: 84875411417     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.1407     Document Type: Conference Paper

References (52)

1. Morgan, J., et al., An Introduction to the Helium Ion Microscope. Microscopy Today, 2006. 14(4): p. 24-30.
2. Vladár, A.E., M.T. Postek, and B. Ming, On the Sub-Nanometer Resolution of Scanning Electron and Helium Ion Microscopes. Microscopy Today, 2009. 17: p. 6.
3. Scipioni, L., et al., Understanding imaging modes in the helium ion microscope J. Vac. Sci. Technol. B, 2009. 27.
4. Joy, D.C. and B.J. Griffin, Is Microanalysis Possible in the Helium Ion Microscope? Microscopy and Microanalysis, 2011. 17(4): p. 643-649.
5. Livengood, R., et al., Subsurface damage from helium ions as a function of dose, beam energy, and dose rate. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009. 27(6): p. 3244-3249.
6. Tan, S., et al., Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2010. 28(6): p. C6F15-C6F21.
7. Ramachandra, R., B. Griffin, and D. Joy, A model of secondary electron imaging in the helium ion scanning microscope. Ultramicroscopy, 2009. 109(6): p. 748-757.
8. Petrov, Y. and O. Vyvenko, Secondary electron emission spectra and energy selective imaging in helium ion microscope, in SPIE Scanning Microscopies 2011: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences 2011, SPIE.
9. Seah, M.P. and W.A. Dench, Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids. Surface Interface Analysis, 1979. 1: p. 1.
10. Postek, M.T., A.E. Vladár, and B. Ming, Recent progress in understanding the imaging and metrology using the helium ion microscope, in Proc. SPIE, M.T. Postek, et al., Editors. 2009, SPIE: Monterey, CA, USA. p. 737808-10.
11. Postek, M.T., et al., Review of current progress in nanometrology with the helium ion microscope. Meas. Sci. Technol., 2011. 22(2).
12. Alkemade, P.F. A., et al., Model for nanopillar growth by focused helium ion-beam-induced deposition. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2010. 28(6): p. C6F22-C6F25.
13. Maas, D.J., et al., Nanofabrication with a helium ion microscope. SPIE Metrology, Inspection, and Process Control for Microlithography XXIV 2010. 7638: p. 763814.
14. TNO-VLL. Available from: http://www.vanleeuwenhoeklab.com/.
15. Hill, R. and F.H.M. Rahman, Advances in helium ion microscopy. Nucl. Instr. and Meth.A, 2010.
16. van Beek, P.J.G., et al., Acoustic immunity improvement for the Helium Ion Microscope - Private communication.
17. Stepanova, M. and S. Dew, eds. Nanofabrication: Techniques and Principles. 1st Edition ed. 2011, Springer: Wien. 4223.
18. Orloff, J., L.W. Swanson, and M. Utlaut, Fundamental limits to imaging resolution for focused ion beams J. Vac. Sci. Technol. B, 1996. 14: p. 5.
19. Castaldo, V., et al., On the influence of the sputtering in determining the resolution of a scanning ion microscope. J. Vac. Sci. Technol. B, 2009. 27: p. 3196.
20. IRC. Available from: http://www.itrs.net/.
21. Postek, M.T., A.E. Vladár, and B. Ming, Breaking the resolution barrier: understanding the science of helium ion beam microscopy., in Frontiers of Characterization and Metrology for Nanoetectronics, D.G. Seiler, et al., Editors. 2009, AIP. p. 249-60.
22. Postek, M.T. and A.E. Vladár, Helium ion microscopy and its application to nanotechnology and nanometrology. Scanning, 2008. 30(6): p. 457-462.
23. Jepson, M., et al., Resolution Limits of Secondary Electron Dopant Contrast in Helium Ion and Scanning Electron Microscopy. Microscopy and Microanalysis, 2011. 17(04): p. 637-642.
24. Ohya, K., et al., Comparison of secondary electron emission in helium ion microscope with gallium ion and electron microscopes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2009. 267(4): p. 584-589.
25. Yang, J., et al., Rapid and precise scanning helium ion microscope milling of solid-state nanopores for biomolecule detection. Nanotechnology, 2011. 22: p. 285310.
26. Scipioni, L., et al., Fabrication and initial characterization of ultrahigh aspect ratio vias in gold using the helium ion microscope J. Vac. Sci. Technol. B 2010. 28: p. C6P18.
27. Bell, D.C., et al., Precision cutting and patterning of graphene with helium ions. Nanotechnology, 2009. 20.
28. Pickard, D. and L. Scipioni, Graphene Nano-Ribbon Patterning in the Orion Plus". Zeiss application note, 2009.
29. Franken, J.H., et al., Precise control of domain wall injection and pinning using helium and gallium focused ion beams. Vol. 109. 2011: AIP. 07D504.
30. Orloff, J., L. Swanson, and M. Utlaut, High Resolution Focused Ion Beams: FIB and Its Applications. 2003, New York: Springer Press. 316.
31. Castaldo, V., High resolution scanning ion microscopy. 2011, Delft University of Technology.
32. + Beams. Microscopy and Microanalysis, 2011. 17(04): p. 624-636.
33. Rudneva, M., et al., HIM lamella preparation, in ICM17. 2010: Rio de Janeiro, Brazil.
34. 3 and its Implications for Pairing in the Undoped Topological Insulator. Physical Review Letters, 2010. 104(5): p. 057001.
35. Utke, I., P. Hoffmann, and J. Melngailis, Gas-assisted focused electron beam and ion beam processing and fabrication. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2008. 26(4): p. 1197-1276.
36. Edinger, K., et al., Electron-beam-based photomask repair. Vol. 22. 2004: AVS. 2902-2906.
37. Sanford, C., et al., Beam induced deposition of platinum using a helium ion microscope. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2009. 27(6): p. 8.
38. Scipioni, L., et al., A Design-of-Experiments Approach to Characterizing Beam-Induced Deposition in the Helium Ion Microscope. Microscopy Today, 2011. 5: p. 7.
39. Boden, S.A., et al., Focused helium ion beam milling and deposition. Microelectronic Engineering, 2011. 88(8): p. 2452.
40. Chen, P., Three-dimensional Nanostructures Fabricated by Ion-Beam-Induced Deposition, in Kavli Institute for Nanoscience. 2010, Delft University of Technology: Delft.
41. Plank, H., et al., The influence of beam defocus on volume growth rates for electron beam induced platinum deposition. Nanotechnology, 2008. 19: p. 485302.
42. 2. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2010. 28(5): p. 946-951.
43. Chen, P., et al., Nanopillar growth by focused helium ion-beam-induced deposition. Nanotechnology, 2010. 21: p. 455302.
44. Smith, D.A., D.C. Joy, and P.D. Rack, Monte Carlo simulation of focused helium ion beam induced deposition Nanotechnology, 2010. 21 p. 175302.
45. Rizvi, S., ed. Handbook of photomask manufacturing technology. 2005, Taylor & Francis: Boca Raton.
46. Friedli, V., et al., Mass sensor for in situ monitoring of focused ion and electron beam induced processes. Applied Physics Letters, 2007. 90(5): p. 053106-053106-3.
47. Lassiter, M.G., T. Liang, and P.D. Rack, Inhibiting Spontaneous Etching of Nanoscale Electron Beam Induced Etching Features: Solutions for Nanoscale Repair of Extreme Ultraviolet Lithography Masks. Journal of Vacuum Science & Technology B, 2008. 26: p. 3.
48. Melngailis, J., Focused Ion Beam Lithography (review article). Nuclear Instrum. Methods in Phys. Res., 1993. B80: p. 1271
49. Yang, J.K.W., et al., Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography J. Vac. Sci. Technol. B, 2009. 27: p. 6.
50. Sidorkin, V., Resist and Exposure Processes for Sub-10-nm Electron and Ion Beam Lithography. 2010, Delft University of Technology.
51. van Langen-Suurling, A., et al., Nanolithography with a scanning sub-nanometer helium ion beam. Submitted to J. Vac. Sci. Technol. B.
52. Berger, M.J., et al., ESTAR, PSTAR, and ASTAR: Computer Programs for Calculating Stopping-Power and Range Tables for Electrons, Protons, and Helium Ions (version 1.2.3). 2005, National Institute of Standards and Technology: Gaithersburg, MD. http://physics.nist.gov/Star