Focused ion beam induced deposition of low-resistivity copper material

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3000-3003

  Gannon, Thomas J ^a   Gu, George ^a   Casey, J David ^a   Huynh, Chuong ^a   Bassom, Neil ^a   Antoniou, Nicholas ^a  

^a Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER (I) HEXAFLUOROACETYLACETONE TRIMETHYLVINYLSILANE; FOCUSED ION BEAMS (FIB); INTEGRATED CIRCUIT DEVICE MODIFICATION; ION BEAM INDUCED DEPOSITION;

AUGER ELECTRON SPECTROSCOPY; COPPER COMPOUNDS; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ETCHING; FILM GROWTH; INTEGRATED CIRCUIT MANUFACTURE; ION BEAM ASSISTED DEPOSITION; ION BEAMS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; VINYL RESINS;

COPPER;

EID: 13244267431     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1826065     Document Type: Conference Paper

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