Approach for Al 2O 3 rear surface passivation of industrial p-type Si PERC above 19%

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 3, 2012, Pages 269-273

  Vermang, Bart ^a,b   Goverde, Hans ^a,c   Tous, Loic ^a,b   Lorenz, Anne ^a   Choulat, Patrick ^a   Horzel, Jorg ^a   John, Joachim ^a   Poortmans, Jef ^a,b   Mertens, Robert ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Al 2O 3; ALD; passivation; PERC; Si; surface

Indexed keywords

ALD; BACK REFLECTION; CELL EFFICIENCY; INTERNAL REFLECTIONS; P-TYPE SI; PERC; REAR SURFACES; RECOMBINATION CURRENTS; SCREEN-PRINTED;

ATOMIC LAYER DEPOSITION; OPEN CIRCUIT VOLTAGE; PASSIVATION; SILICON; SILICON NITRIDE; SURFACES;

ALUMINUM;

EID: 84859967576     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2196     Document Type: Article

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