Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature

Applied Physics Letters

Volumn 92, Issue 17, 2008, Pages

  Sheoran, Manav ^a,b   Kim, Dong Seop ^a   Rohatgi, Ajeet ^a   Dekkers, H F W ^c   Beaucarne, G ^c   Young, Matthew ^d   Asher, Sally ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IMEC   (Belgium)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; HIGH TEMPERATURE OPERATIONS; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE; SILICON WAFERS;

DEUTERATED SILICON NITRIDE FILMS; HYDROGEN DIFFUSION; TRAPPING LAYERS;

THIN FILMS;

EID: 43049103780     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2917467     Document Type: Article

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