Annealing studies of sub-stoichiometric amorphous SiOx layers for c-Si surface passivation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1021-1024

  Einsele, F ^a   Beyer, W ^a   Rau, U ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EXPERIMENTS; CRYSTALLINE SILICON WAFERS; EFFECTIVE LIFETIME; EFFECTIVE-LIFETIME MEASUREMENTS; HYDROGEN EFFUSION; LOW TEMPERATURES; OXYGEN CONCENTRATIONS; P-TYPE; SI SURFACES; STRETCHING MODES; STRUCTURAL TRANSITIONS; SURFACE PASSIVATION; THERMAL STABILITY; WAVE NUMBERS;

ABSORPTION SPECTROSCOPY; AMORPHOUS ALLOYS; ANNEALING; CONCENTRATION (PROCESS); INFRARED SPECTROSCOPY; NANOCRYSTALLINE ALLOYS; OXYGEN; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON OXIDES; SILICON WAFERS; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS;

AMORPHOUS SILICON;

EID: 77952570828     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982752     Document Type: Conference Paper

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