Von (N≥3) defects in irradiated and heat-treated silicon

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 267-272

  Murin, L I ^a   Lindstrom J L ^b   Svensson, B G ^c   Markevich, V P ^a,d   Peaker, A R ^d   Londos, C A ^e  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^b LUND UNIVERSITY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

^e UNIVERSITY OF ATHENS   (Greece)

Author keywords

Oxygen; Silicon; Vacancy; Vibrational modes

Indexed keywords

DEFECTS; DIMERS; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; VACANCIES; VANADIUM DIOXIDE;

LOCAL VIBRATIONAL MODE; MEV-ELECTRONS; OXYGEN DIMERS; OXYGEN-RELATED DEFECTS; SI CRYSTALS; TEMPERATURE RANGE; THERMAL DOUBLE DONORS; VIBRATIONAL MODES;

SILICON COMPOUNDS;

EID: 33750289009     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.267.267     Document Type: Conference Paper

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