SCOPUS 정보 검색 플랫폼

AIP Advances

Volumn 1, Issue 3, 2011, Pages

High-density G-centers, light-emitting point defects in silicon crystal

(5) Murata, Koichi a,b Yasutake, Yuhsuke c Nittoh, Koh Ichi a Fukatsu, Susumu c Miki, Kazushi a,b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOM LASERS; ATOMS; CARBON; CRYSTALS; LIGHT; LIGHT EMISSION; SILICON;

HEXAMETHYLDISILAZANE; LASER ANNEALING; LASER ANNEALING PROCESS; PHOTOLUMINESCENCE MEASUREMENTS; SILICON CRYSTAL; SILICON SURFACES; SOLUBILITY LIMITS; SURFACE REGION;

POINT DEFECTS;

EID: 80053492539 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.3624905 Document Type: Article

Times cited : (38)

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