Early SiO2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 109-112

  Torres, V J B ^a   Coutinho, J ^a   Jones, R ^b   Barroso, M ^a   Oberg S ^c   Briddon, P R ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Oxygen precipitation; Radiation damage; Silicon

Indexed keywords

HEAT TREATMENT; OXYGEN; PRECIPITATION (CHEMICAL); PROBABILITY DENSITY FUNCTION; RADIATION DAMAGE; THERMODYNAMICS;

INFRA-RED ABSORPTION; OXYGEN PRECIPITATION; THERMAL DONORS;

SILICON COMPOUNDS;

EID: 33645237941     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.029     Document Type: Conference Paper

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