Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure

Journal of Physics Condensed Matter

Volumn 17, Issue 22, 2005, Pages

  Londos, C A ^a   Antonaras, G J ^a   Potsidi, M S ^a   Misiuk, A ^b   Antonova, I V ^c   Emtsev, V V ^d  

^a UNIVERSITY OF ATHENS   (Greece)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); DEFECTS; ELECTRONS; HYDROSTATIC PRESSURE; NEUTRON IRRADIATION; OXYGEN; PRECIPITATION (CHEMICAL); RADIATION DAMAGE;

ISOCHRONAL ANNEALING; RADIATION-INDUCED DEFECTS; THERMAL PRE-TREATMENT;

CRYSTAL GROWTH FROM MELT;

EID: 21144432153     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/22/023     Document Type: Article

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