The VO2* defect in silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 509-513

  Lindstrom J L ^a   Murin, L I ^b   Svensson, B G ^c   Markevich, V P ^d   Hallberg, T ^e  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c UNIVERSITY OF OSLO   (Norway)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

^e SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

Defects; LVMs; Silicon; Vacancy dioxygen

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRON IRRADIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED RADIATION; LATTICE VIBRATIONS; RELAXATION PROCESSES; SILICON COMPOUNDS; THERMAL EFFECTS;

LOCAL VIBRATIONAL MODES (LVM); VACANCIES;

CRYSTAL DEFECTS;

EID: 0347134678     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.146     Document Type: Conference Paper

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