Controlling space charge of oxide-free si by in situ modification of dipolar alkyl monolayers

Journal of Physical Chemistry C

Volumn 116, Issue 21, 2012, Pages 11434-11443

  Toledano, Tal ^a   Biller, Ariel ^a   Bendikov, Tatyana ^a   Cohen, Hagai ^a   Vilan, Ayelet ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYL MONOLAYERS; DIPOLAR GROUPS; FERMI LEVEL PINNING; IN-SITU; IN-SITU REACTIONS; MOLECULAR JUNCTION; MOLECULAR MONOLAYER; REACTIVE SITE; SCHOTTKY BARRIER HEIGHTS; SI SURFACE POTENTIAL; SI SURFACES; SURFACE PASSIVATION; TUNNELING BARRIER; TWO-STEP PROCEDURE;

BINDING SITES; ELECTRIC SPACE CHARGE; MERCURY (METAL); MONOLAYERS;

SILICON;

EID: 84861803224     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp212043v     Document Type: Article

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