Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

AIP Advances

Volumn 2, Issue 1, 2012, Pages

  Har Lavan, Rotem ^a   Yaffe, Omer ^a   Joshi, Pranav ^a   Kazaz, Roy ^a   Cohen, Hagai ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON AFFINITY; METALS; NARROW BAND GAP SEMICONDUCTORS; PASSIVATION; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON;

ALKYL CHAIN LENGTHS; AMBIENT ATMOSPHERE; EFFECTIVE ELECTRONS; METAL SEMICONDUCTORS; METAL-SEMICONDUCTOR JUNCTIONS; MOLECULAR MONOLAYER; MOLECULAR SURFACES; TEMPERATURE TREATMENTS;

SEMICONDUCTOR JUNCTIONS;

EID: 84861837148     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.3694140     Document Type: Article

References (47)

1. N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals. (Oxford University Press, London, 1948).
2. W. G. Spitzer and C. A. Mead, Barrier Height Studies on Metal-Semiconductor Systems. J. Appl. Phys. 34, 3061 (1963).
3. C. R. Crowell, H. B. Shore, and E. E. LaBate, Surface-State and Interface Effects in Schottky Barriers at n-Type Silicon Surfaces. J. Appl. Phys. 36, 3843 (1965).
4. L. J. Brillson, Transition in Schottky Barrier Formation with Chemical Reactivity. Phys. Rev. Lett. 40, 260 (1978).
5. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices. (Wiley-Interscience, New York, 2007).
6. J. Bardeen, Surface States and Rectification at a Metal Semi-Conductor Contact. Phys. Rev. 71, 717 (1947).
7. A. M. Cowley and S. M. Sze, Surface States and Barrier Height of Metal-Semiconductor Systems. J. Appl. Phys. 36, 3212 (1965).
8. S. Kurtin, T. C. McGill, and C. A. Mead, Fundamental Transition in the electronic Nature of Solids. Phys. Rev. Lett. 22, 1433 (1969).
9. V. Heine, Theory of Surface States. Phys. Rev. 138, A1689 (1965).
10. W. E. Spicer, Unified defect model and beyond. J. Vac. Sci. Technol. 17, 1019 (1980).
11. J. L. Freeouf and J. M. Woodall, Schottky barriers: An effective work function model. Appl. Phys. Lett. 39, 727 (1981).
12. R. T. Tung, Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor Interfaces. Phys. Rev. Lett. 84, 6078 (2000).
13. D. M. Alloway, M. Hofmann, D. L. Smith, N. E. Gruhn, A. L. Graham et al., Interface Dipoles Arising from Self-Assembled Monolayers on Gold: UV-Photoemission Studies of Alkanethiols and Partially Fluorinated Alkanethiols. J. Phys. Chem. B 107, 11690 (2003).
14. 2/Si Diodes by Varying Interfacial Dipoles Using Molecular Monolayers. Adv. Mater. 13, 508 (2001).
15. A. Vilan and D. Cahen, How organic molecules can control electronic devices. Trends Biotechnol 20, 22 (2002).
16. R. Cohen, L. Kronik, A. Shanzer, D. Cahen, A. Liu et al., Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP. J. Am. Chem. Soc. 121, 10545 (1999).
17. R. Hunger, R. Fritsche, B. Jaeckel, W. Jaegermann, L. J. Webb et al., Chemical and electronic characterization of methylterminated Si(111) surfaces by high-resolution synchrotron photoelectron spectroscopy. Phys. Rev. B 72, 045317 (2005).
18. D. Aureau, A. Moraillon, C. Henry de Villeneuve, F. Ozanam, P. Allongue et al., Electronic Properties and pH Stability of Si(111)/Alkyl Monolayers. ECS Trans. 19, 373 (2009).
19. A. Vilan, J. Ghabboun, and D. Cahen, Molecule-Metal Polarization at Rectifying GaAs Interfaces. J. Phys. Chem. B 107, 6360 (2003).
20. H. Takato, I. Sakata, and R. Shimokawa, Quinhydrone/methanol treatment for the measurement of carrier lifetime in silicon substrates. Jpn. J. Appl. Phys. 241, L870 (2002).
21. A. B. Sieval, C. L. Huisman, A. Schonecker, F. M. Schuurmans, A. S. H. van der Heide et al., Silicon Surface Passivation by Organic Monolayers: Minority Charge Carrier Lifetime Measurements and Kelvin Probe Investigations. J. Phys. Chem. B 107, 6846 (2003).
22. S. Avasthi, Y. Qi, G. K. Vertelov, J. Schwartz, A. Kahn et al., Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone. Appl. Phys. Lett. 96, 222109 (2010).
23. E. J. Nemanick, P. T. Hurley, B. S. Brunschwig, and N. S. Lewis, Chemical and Electrical Passivation of Silicon (111) Surfaces through Functionalization with Sterically Hindered Alkyl Groups. J. Phys. Chem. B 110, 14800 (2006).
24. A. Salomon, D. Berkovich, and D. Cahen, Molecular modification of an ionic semiconductor-metal interface: ZnO/molecule/Au diodes. Appl. Phys. Lett. 82, 1051 (2003).
25. L. Kronik and Y. Shapira Surface photovoltage phenomena: theory, experiment, and applications. Surf. Sci. rep. 37, 1 (1999).
26. H. Haick, M. Ambrico, T. Ligonzo, and D. Cahen, Discontinuous molecular films can control metal/semiconductor junctions. Adv. Mater. 16, 2145 (2004).
27. B. Chhabra, S. Suzer, R. L. Opila, and C. B. Honsberg, Electrical and chemical characterization of chemically passivated silicon surfaces. Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE 1-4 (2008).
28. Y. Liu and H. Yu, Alkyl Monolayer-Passivated Metal-Semiconductor Diodes: Molecular Tunability and Electron Transport. ChemPhysChem 3, 799 (2002).
29. G. Ashkenasy, D. Cahen, R. Cohen, A. Shanzer, and A. Vilan, Molecular engineering of semiconductor surfaces and devices. Acc. Chem. Res. 35, 121 (2002).
30. A. Salomon, T. Boecking, C. K. Chan, F. Amy, O. Girshevitz et al., How Do Electronic Carriers Cross Si-Bound Alkyl Monolayers? Phys. Rev. Lett. 95, 266807 (2005).
31. H. Takato, I. Sakata, and R. Shimokawa, Surface passivation of silicon substrates using quinhydrone/methanol treatment. Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on 2, 1108 (2003).
32. H. Cohen, Chemically resolved electrical measurements using x-ray photoelectron spectroscopy. Appl. Phys. Lett. 85, 1271 (2004).
33. H. Cohen, C. Nogues, I. Zon, and I. Lubomirsky, e-beam-referenced work-function evaluation in an x-ray photoelectron spectrometer. J. Appl. Phys. 97, 113701 (2005).
34. O. Yaffe, L. Scheres, S. R. Puniredd, N. Stein, A. Biller et al., Molecular Electronics at Metal/Semiconductor Junctions. Si Inversion by Sub-Nanometer Molecular Films. Nano Letters 9, 2390 (2009).
35. J. Schmidt and A. G. Aberle, Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers. J. Appl. Phys. 81, 6186 (1997).
36. M. B. Prince, Drift Mobilities in Semiconductors. II. Silicon. Phys. Rev. 93, 1204 (1954).
37. R. B. Godfrey and M. A. Green, 655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells. Appl. Phys. Lett. 34, 790 (1979).
38. R. J. Stirn and Y. C. M. Yeh, A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell. Appl. Phys. Lett. 27, 95 (1975).
39. M. A. Green, F. D. King, and J. Shewchun, Minority-carrier MIS tunnel-diodes and their application to electron-voltaic and photo-voltaic energy-conversion. 1. Theory. Solid State Electron. 17, 551 (1974).
40. P. Chattopadhyay, Functional dependence of open-circuit voltage on interface parameters and doping concentration of MIS solar cells. physica status solidi (a) 140, 587 (1993).
41. M. Wittmer and J. L. Freeouf, Ideal Schottky diodes on passivated silicon. Phys. Rev. Lett. 69, 2701 (1992).
42. H. Haick, M. Ambrico, T. Ligonzo, R. T. Tung, and D. Cahen, Controlling Semiconductor/Metal Junction Barriers by Incomplete, Nonideal Molecular Monolayers. J. Am. Chem. Soc. 128, 6854 (2006).
43. J. Shewchun, M. A. Green, and F. D. King, Minority-carrier MIS tunnel-diodes and their application to electron-voltaic and photo-voltaic energy-conversion. 2. Experiment. Solid State Electron. 17, 563 (1974).
44. S. J. Fonash, The role of the interfacial layer in metal-semiconductor solar cells. J. Appl. Phys. 46, 1286 (1975).
45. N. G. Tarr, D. L. Pulfrey, and D. S. Camporese, An analytic model for the MIS tunnel junction. IEEE T. Electron. Dev. 30, 1760 (1983).
46. B. Chhabra, S. Bowden, R. L. Opila, and C. B. Honsberg, High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation. Appl. Phys. Lett. 96, 063502 (2010).
47. C. Sommerhalter, T. W. Matthes, T. Glatzel, A. Jäger-Waldau, and M. C. Lux-Steiner, High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy. Appl. Phys. Lett. 75, 286 (1999).