Modifying electronic properties at the silicon-molecule interface using atomic tethers

Solid-State Electronics

Volumn 54, Issue 12, 2010, Pages 1657-1664

  Hacker, Christina A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Aliphatic monolayers; Band bending; Interface band diagram; Interface dipole; Molecular electronics; Photoemission spectroscopy; Silicon hybrid

Indexed keywords

ALIPHATIC MONOLAYERS; BAND DIAGRAMS; BANDBENDING; INTERFACE DIPOLE; PHOTOEMISSION SPECTROSCOPY;

ATOMIC SPECTROSCOPY; ATOMS; BINDING ENERGY; CHARGE TRANSFER; CONTACT ANGLE; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; ION EXCHANGE; LUMINESCENCE OF ORGANIC SOLIDS; MASS TRANSFER; MOLECULAR ELECTRONICS; MOLECULES; MONOLAYERS; OXYGEN; PHOTOEMISSION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ELLIPSOMETRY; SULFUR; TETHERLINES; THICKNESS MEASUREMENT; WORK FUNCTION;

SEMICONDUCTING SILICON;

EID: 77957295339     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.06.012     Document Type: Article

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