Tuning tunneling current rectification with chemical modification of silicon(1 0 0) surfaces

Chemical Physics Letters

Volumn 469, Issue 4-6, 2009, Pages 279-283

  Sinha, Shoma ^a,b   Dickie, Adam J ^a,b   Wolkow, Robert A ^a,b  

^a UNIVERSITY OF ALBERTA   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; CIVIL AVIATION; ELECTRIC RECTIFIERS; ELECTRON TRANSPORT PROPERTIES; HYDROGEN; PASSIVATION; SCANNING TUNNELING MICROSCOPY; STYRENE; TUNNELS;

CLEAN SURFACES; COVALENTLY BONDED; ENERGY BANDS; MAJORITY CARRIERS; MINORITY CARRIERS; RECTIFICATION RATIOS; REVERSE BIAS; SI(1 0 0 ); SURFACE DIPOLES; SURFACE STATE; TUNNEL CONTACTS; TUNNELING CURRENTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 59249095897     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2008.12.071     Document Type: Article

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