Competitive anion/anion interactions on copper surfaces relevant for Damascene electroplating

Electrochimica Acta

Volumn 70, Issue , 2012, Pages 286-295

  Hai, N T M ^a   Huynh, T T M ^a   Fluegel, A ^b   Arnold, M ^b   Mayer, D ^b   Reckien, W ^c   Bredow, T ^c   Broekmann, P ^a,b  

^a UNIVERSITY OF BERN   (Switzerland)

^b BASF SE   (Germany)

^c UNIVERSITY OF BONN   (Germany)

Author keywords

Additive; Copper Damascene process; Electroplating; STM

Indexed keywords

ADLAYERS; ANION ADSORPTION; CHLORIDE MATRIX; CHLORIDE SPECIES; CO-ADSORPTION; COMPETITIVE INTERACTIONS; COPPER DAMASCENE PROCESS; COPPER DEPOSITION; COPPER DISSOLUTION; COPPER SURFACE; CU DAMASCENE; CU(1 0 0); DEFECT SITES; HEAD GROUPS; IN-SITU; MODEL INTERFACE; ON CHIPS; PHASE FORMS; PRE-REQUISITES; REACTIVE CONDITION; STM; SULFONIC ACID;

ADDITIVES; ADSORPTION; CHEMISORPTION; CHLORINE COMPOUNDS; CYCLIC VOLTAMMETRY; DISSOCIATION; ELECTROPLATING; SODIUM; SURFACE REACTIONS; VAPOR DEPOSITION;

COPPER;

EID: 84860266233     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2012.03.054     Document Type: Article

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