Surface reactions of TiCl4 and Al(CH3)3 on GaAs(100) during the first half-cycle of atomic layer deposition

Surface Science

Volumn 605, Issue 13-14, 2011, Pages 1243-1248

  Granados Alpizar, Bernal ^a   Muscat, Anthony J ^a  

^a University of Arizona   (United States)

Author keywords

Al(CH3)3; ALD; GaAs; Oxide removal; TiCl4

Indexed keywords

AL(CH3)3; ALD; GAAS; OXIDE REMOVAL; TICL4;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MONOLAYERS; SEMICONDUCTING GALLIUM; TEMPERATURE PROGRAMMED DESORPTION; TITANIUM; TITANIUM DIOXIDE; WATER VAPOR;

SURFACE REACTIONS;

EID: 79957831277     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.04.009     Document Type: Article

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