In situ X-ray photoelectron spectroscopy characterization of Al 2 O 3 /GaSb interface evolution

Applied Surface Science

Volumn 257, Issue 20, 2011, Pages 8747-8751

  McDonnell, S ^a   Zhernokletov, D M ^a   Kirk, A P ^a   Kim, J ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

Atomic layer deposition; GaSb; High mobility substrates; XPS

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; BINARY ALLOYS; CHEMICAL BONDS; CHEMICAL DETECTION; DEIONIZED WATER; GALLIUM ALLOYS; GALLIUM COMPOUNDS; HEAT TREATMENT; III-V SEMICONDUCTORS; INTERFACE STATES; PHOTOELECTRONS; PHOTONS;

AFTER-HEAT TREATMENT; DETECTION LIMITS; GASB; HIGH MOBILITY; INTERFACE EVOLUTION; MONOCHROMATIC X-RAYS; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; TRIMETHYLALUMINUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79959339568     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.05.034     Document Type: Article

References (35)

1. M. Levinstein, S. Rumyantsev, and M. Shur Handbook Series on Semiconductor Parameters Volume 2: Ternary and Quaternary III-V Compounds 1999 World Scientific Singapore Singapore 112
2. E.E. Barrowcliff, L.O. Bubulac, D.T. Cheung, W.E. Tennant, and A.M. Andrews Tech. Dig. - Int. Electron Devices Meet. 1977 559
3. P.D. Ye, Y. Xuan, Y. Wu, and M. Xu S. Oktyabrsky, P.D. Ye, Fundamentals of III-V Semiconductor MOSFETS 2010 Springer New York 173 193
4. A. Ali, H.S. Madan, A.P. Kirk, D.A. Zhao, D.A. Mourey, M.K. Hudait, R.M. Wallace, T.N. Jackson, B.R. Bennett, J.B. Boos, and S. Datta Applied Physics Letters 97 2010 143502
5. C.L. Hinkle, M. Milojevic, B. Brennan, A.M. Sonnet, F.S. Aguirre-Tostado, G.J. Hughes, E.M. Vogel, and R.M. Wallace Applied Physics Letters 94 2009 162101
6. C.L. Hinkle, A.M. Sonnet, E.M. Vogel, S. McDonnell, G.J. Hughes, M. Milojevic, B. Lee, F.S. Aguirre-Tostado, K.J. Choi, J. Kim, and R.M. Wallace Applied Physics Letters 91 2007 163512
7. A. Sonnet, C. Hinkle, M. Jivani, R. Chapman, G. Pollack, R. Wallace, and E. Vogel Applied Physics Letters 93 2008 122109
8. E.M. Vogel, A.M. Sonnet, R.V. Galatage, M. Milojevic, C.L. Hinkle, and R.M. Wallace ECS Transactions 28 1 2010 209
9. M. Scarrozza, G. Pourtois, M. Houssa, M. Caymax, A. Stesmans, M. Meuris, and M. Heyns Applied Physics Letters 95 2009 253504
10. J. Robertson Applied Physics Letters 94 2009 152104
11. W. Wang, K. Xiong, G. Lee, M. Huang, R.M. Wallace, and K. Cho Applied Surface Science 256 2010 6569 6573
12. W. Wang, K. Xiong, R.M. Wallace, and K.J. Cho Journal of Physical Chemistry C 114 2010 22610
13. C.J. Sandroff, R.N. Nottenburg, J.-C. Bischoff, and R. Bhat Applied Physics Letters 51 1987 33 35
14. R. Stine, E. Aifer, L. Whitman, and D. Petrovykh Applied Surface Science 255 2009 7121 7125
15. Z.Y. Liu, T.F. Kuech, and D.A. Saulys Applied Physics Letters 83 2003 2587 2589
16. R.M. Wallace ECS Transactions 16 2008 255 271
17. A. Herrera-Gómez, P. Pianetta, D. Marshall, E. Nelson, and W. Spicer Physical Review B 61 2000 12988 12991
18. As a standard procedure, the full width half maximum (FWHM) of features related to the bulk substrate where not permitted to vary between the spectra obtained after each processing step. This is because changes in the FWHM indicate changes in the chemical bonding that should be fitted with an additional chemical state. The FWHM can also vary when a materials degree of crystallinity changes. However this is not believed to be an issue within the temperature range of our experiments.
19. The Sb 4d peak was chosen in lieu of the stronger 3d peak to avoid interference with O1s.
20. G. Hollinger, R. Skheyta-Kabbani, and M. Gendry Physical Review B 49 1994 11159 11167
21. J.F. Moulder, W.F. Stickle, P.E. Sobol, K.D. Bomben, Handbook of X-ray Photoelectron Spectroscopy Perkin-Elmer Corporation, Physical Electronics Division, 1992.
22. C.J. Powell, and A. Jablonski NIST Electron Effective-Attenuation-Length Database, Version 1.3, SRD 82 2011 National Institute of Standards and Technology Gaithersburg, MD
23. N. Kitamura, T. Kikuchi, M. Kakehi, and T. Wada Japanese Journal of Applied Physics 23 1984 1534 1535
24. C. Hogan, R. Magri, and R. Del Sole Physical Review Letters 104 2010 157402
25. M. Milojevic, C. Hinkle, F. Aguirre-Tostado, H. Kim, E. Vogel, J. Kim, and R. Wallace Applied Physics Letters 93 2008 252905
26. M. Milojevic, F.S. Aguirre-Tostado, C.L. Hinkle, H.C. Kim, E.M. Vogel, J. Kim, and R.M. Wallace Applied Physics Letters 93 2008 202902
27. D.R. Lide CRC Handbook of Chemistry and Physics 88th ed. 2008 CRC Boca Raton 4 48
28. G.P. Schwartz, J.E. Griffiths, and G.J. Gualtieri Thin Solid Films 94 1982 213 222
29. G.P. Schwartz Thin Solid Films 103 1983 3 16
30. M. Milojevic, C.L. Hinkle, E.M. Vogel, and R.M. Vogel Interfacial chemistry of oxides on III-V compound semiconductors P. Ye, S. Oktyabrsky, Fundamentals of Compound Semiconductor MOSFETs 2009 Springer 145
31. A.J. Bard, R. Parsons, J. Jordan, Standard Potentials in Aqueous Solution, International Union of Pure and Applied Chemistry.
32. J. Shen, J.B. Clemens, E.A. Chagarov, D.L. Feldwinn, W. Melitz, T. Song, S.R. Bishop, A.C. Kummel, and R. Droopad Surface Science 504 2010 1757
33. For example, see: E.A. Chagarov, and A.C. Kummel S. Oktyabrsky, P.D. Ye, Fundamentals of III-V Semiconductor MOSFETs 2011 Springer 93
34. C.L. Hinkle, M. Milojevic, E.M. Vogel, and R.M. Wallace Applied Physics Letters 95 2009 151905
35. J. Robinson, and S. Mohney Journal of Applied Physics 96 2004 2684