SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 157, Issue 5, 2010, Pages

Growth and interface evolution of HfO2 films on GaAs(100) surfaces

(4) Gougousi, Theodosia a Hackley, Justin C a,c Demaree, J Derek b Lacis, John W a

a UNIVERSITY OF MARYLAND BALTIMORE COUNTY (United States)

b U S ARMY RESEARCH LABORATORY (United States)

c LABORATORY FOR PHYSICAL SCIENCES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC OXIDE; AS-DEPOSITED FILMS; ATOMIC LAYER; ETCHED SUBSTRATES; ETCHED SURFACE; GAAS SURFACES; GAAS(1 0 0); GALLIUM OXIDES; INITIAL FILM; INTERFACE EVOLUTION; NATIVE OXIDES; POLYCRYSTALLINE; PROCESS CYCLES; SHARP INTERFACE; SURFACE ACTIVITIES; TETRAKIS;

ARSENIC; DEPOSITION; FILM GROWTH; GALLIUM ARSENIDE; HAFNIUM; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC COMPOUNDS; OXIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 77951176435 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3353166 Document Type: Article

Times cited : (21)

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