Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces

Thin Solid Films

Volumn 518, Issue 8, 2010, Pages 2006-2009

  Gougousi, Theodosia ^a   Lacis, John W ^a  

^a UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

Author keywords

Atomic layer deposition; Dielectrics; Gallium arsenide; Interface; Titanium oxide; Transmission electron microscopy; X ray photoelectron spectroscopy

Indexed keywords

DIELECTRICS; GAAS SURFACES; GAAS(1 0 0); INTERFACE; NATIVE OXIDES; OXIDE LAYER; PROCESS CYCLES; TETRAKIS; TIO; TRANSMISSION ELECTRON;

ARSENIC; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; ELECTRONS; GALLIUM ALLOYS; PHOTOELECTRICITY; PHOTONS; SEMICONDUCTING GALLIUM; TITANIUM; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

GALLIUM ARSENIDE;

EID: 74249104392     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.08.028     Document Type: Letter

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