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Volumn 13, Issue 9, 2010, Pages

Effect of using chemical vapor deposition WSi2 and postmetallization annealing on gaAs metal-oxide-semiconductor capacitors

(8) Ong, B S a,b Pey, K L a,b Ong, C Y b Tan, C S b Gan, C L a,c Cai, H c Antoniadis, D A a,d Fitzgerald, E A a,e

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

d Department of Electrical Engineering and Computer Science (United States)

e Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-V MEASUREMENT; CAPACITANCE-VOLTAGE CHARACTERISTICS; CVD PROCESS; DIELECTRIC CONSTANTS; FLAT-BAND VOLTAGE; GAAS; GAAS SUBSTRATES; LOW FREQUENCY; METAL GATE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PHASE TRANSFORMATION; POST-METALLIZATION ANNEALING; THERMAL-ANNEALING; TUNGSTEN SILICIDE;

CAPACITANCE; CAPACITORS; FLUORINE; GALLIUM ALLOYS; SEMICONDUCTING GALLIUM; SILICIDES; TUNGSTEN;

CHEMICAL VAPOR DEPOSITION;

EID: 77954718354 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3460300 Document Type: Article

Times cited : (2)

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