Dielectric constant of porous ultra low-thin films

Journal of the Electrochemical Society

Volumn 159, Issue 5, 2012, Pages

  Jousseaume, V ^a   Gourhant, O ^b   Gonon, P ^c   Zenasni, A ^a   Favennec, L ^b  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN FEATURES; DIPOLAR CONTRIBUTION; ELECTRICAL CHARACTERIZATION; LOW DIELECTRIC CONSTANT MATERIALS; LOWER LIMITS; POROGENS; POST TREATMENT; REFRACTIVE INDEX MEASUREMENT; SI-O-C BOND; TEMPERATURE DEPENDENCE;

MICROELECTRONICS; SILICON; THIN FILMS;

DIELECTRIC MATERIALS;

EID: 84859313674     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.jes113605     Document Type: Article

References (39)

1. International Technology Roadmap for Semiconductors (ITRS), http://www.itrs.net.
2. A. Grill and V. Patel, Appl. Phys. Lett., 79, 803 (2001). 10.1063/1.1392976
3. L. Favennec, V. Jousseaume, G. Gerbaud, A. Zenasni, and G. Passemard, J. Appl. Phys., 102, 064107 (2007). 10.1063/1.2783963
4. O. Gourhant, V. Jousseaume, L. Favennec, A. Zenasni, P. Maury, L. Mage, P. Gonon, and G. Vincent, Mater. Res. Soc. Symp. Proc., 990, B06-06 (2007). 10.1557/PROC-0990-B03-06
5. V. Jousseaume, A. Zenasni, O. Gourhant, L. Favennec, and M. R. Baklanov, Ultra low-k by CVD: deposition and curing in Advanced Interconnects for ULSI Technology Edited by, M. Baklanov, P. Ho, and, E. Ehrenfried Zschech, John Wiley Sons, Chichester (2011).
6. Y. Lin, T. Y. Tsui, and J. J. Vlassak, J. Electrochem. Soc., 153, F144 (2006). 10.1149/1.2202120
7. J. Y. Kim, M. S. Hwang, Y.-H. Kim, H. J. Kim, and Y. Lee, J. Appl. Phys., 90, 2469 (2001). 10.1063/1.1388861
8. P. Gonon, A. Sylvestre, H. Meynen, and L. Van Cotthem, J. Electrochem. Soc., 150, F47 (2003). 10.1149/1.1545467
9. C. S. Kim and H. D. Jeong, J. Phys. Chem. B, 112, 16257 (2008). 10.1021/jp808529q
10. R. S. Smith, T. Tsui, and P. S. Ho, J. Electron. Mat., 39, 2337 (2010). 10.1007/s11664-010-1297-y
11. V. Jousseaume, A. Zenasni, L. Favennec, G. Gerbaud, M. Bardet, J. P. Simon, and A. Humbert, J. Electrochemical Soc., 154, 1 (2007). 10.1149/1.2667980
12. O. Gourhant, G. Gerbaud, A. Zenasni, L. Favennec, P. Gonon, and V. Jousseaume, J. Appl. Phys., 108, 124105 (2010). 10.1063/1.3518512
13. A. Zenasni, V. Jousseaume, P. Holliger, L. Favennec, O. Gourhant, P. Maury, and G. Gerbaud, J. Appl. Phys., 102, 094107 (2007). 10.1063/1.2805451
14. J. C. M. Garnett, Phil. Trans. R. Soc. Lond., 203, 385 (1904). 10.1098/rsta.1904.0024
15. D. A. G. Bruggeman, Ann. Phys., 24, 636 (1935). 10.1002/andp.19354160705
16. G. Niklasson, C. Granqvist, O. Huneri, Appl. Optics, 20, 26 (1981). 10.1364/AO.20.000026
17. V. McGahay, Materials, 3, 536 (2010). 10.3390/ma3010536
18. T. K. S. Wong, B. Liu, B. Narayanan, V. Ligatchev, and R. Kumar, Thin Solid Films, 462-463, 156 (2004). 10.1016/j.tsf.2004.05.048
19. P. Marsik, P. Verdonck, D. De Roest, and M. R. Baklanov, Thin Solid Films, 518, 4266 (2010). 10.1016/j.tsf.2009.12.110
20. C. J. F. Böttcher and P. Bordewijk, Theory of electric Polarization, 2nd ed., Elsevier, Amsterdam (1978).
21. B. Blampey, M. Gallitre, A. Farcy, T. Lacrevaz, S. De Rivaz, C. Bermond, B. Fléchet, V. Jousseaume, A. Zenasni, and P. Ancey, Microelectron. Eng., 87, 329 (2010). 10.1016/j.mee.2009.07.023
22. V. Gupta, J.-H. Zhao, D. Edwards, C. D. Mortensen, C. Heideman, D. C. Johnson, K.-H. Lu, and P. S. Ho, 11th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, 714 (2008).
23. H. Fröhlich, Theory of Dielectrics, 2nd ed., Oxford University Press, Oxford (1958).
24. K. Postava, T. Yamaguchi, and M. Horie, Appl. Phys. Lett., 79, 2231 (2001). 10.1063/1.1408607
25. V. Jousseaume, Ch. Le Cornec, F. Ciaramella, L. Favennec, A. Zenasni, G. Simon, J. P. Simon, G. Gerbaud, and G. Passemard, Mater. Res. Soc. Symp. Proc., 914, F04 (2006). 10.1557/PROC-0914-F04-06
26. G. Dubois, T. Magbitang, W. Volksen, E. Simonyi, and R. D. Miller, Proceedings of the IEEE International Interconnect Technology Conference, 226 (2005).
27. P.-I. Wang, Z. Wu, T.-M. Lu, and L. V. Interrante, J. Electrochem Soc., 153, G267 (2006). 10.1149/1.2167932
28. S. M. Bilodeau, P. Chen, W. Giannetto, C. Xu, W. Hunks, T. H. Baum, and J. F. Roeder, Proceedings of the Advanced Metallization Conference, 367 (2006).
29. A. Grill and V. Patel, J. Appl. Phys., 104, 024113 (2008). 10.1063/1.2959341
30. A. Grill, J. Appl. Phys., 93, 1785 (2003). 10.1063/1.1534628
31. D. D. Burkey and K. K. Gleason, J. Vac. Sci. Technol. A, 22, 61 (2004). 10.1116/1.1627766
32. A. M. Urbanowicz, K. Vanstreels, P. Verdonck, D. Shamiryan, S. De Gendt, and M. R. Baklanov, J. Appl. Phys., 107, 104122 (2010). 10.1063/1.3428958
33. V. Jousseaume, L. Favennec, A. Zenasni, and O. Gourhant, Surf. Coat. Technol., 201, 9248 (2007). 10.1016/j.surfcoat.2007.04.105
34. P. Verdonck, D. De Roest, S. Kaneko, R. Caluwaerts, N. Tsuji, K. Matsushita, N. Kemeling, Y. Travaly, H. Sprey, M. Schaekers, and G. Beyer, Surf. Coat. Technol., 201, 9264 (2007). 10.1016/j.surfcoat.2007.04.096
35. C.-C. Yang, P.-T. Wu, W.-C. Chen, and H.-L. Chen, Polymer, 45, 5691 (2004). 10.1016/j.polymer.2004.05.071
36. R. Navamathavan, K. S. Oh, S. Y. Chang, S. H. Kim, Y. J. Jang, A. S. Jung, H. J. Lee, K. M. Lee, and C. K. Choi, J. J. Appl. Phys., 45, 8435 (2006). 10.1143/JJAP.45.8435
37. S.-K. Kwak, K.-H. Jeong, and S.-W. Rhee, J. Electrochem. Soc., 151, F11 (2004). 10.1149/1.1636738
38. S.-K. Min, J.-M. Park, K. Song, M. Y. Jin, C. Lee, D. Y. Yoon, and H.-W. Rhee, Mol. Cryst. Liqu. Cryst., 377, 193 (2002). 10.1080/713738484
39. V. Jousseaume, G. Rolland, D. Babonneau, and J. P. Simon, Thin Solid Films, 517, 4413 (2009). 10.1016/j.tsf.2009.02.084