A novel polycarbosilane-based low- k dielectric material

Journal of the Electrochemical Society

Volumn 153, Issue 4, 2006, Pages

  Wang, Pei I ^a,c   Wu, Zhizhong ^b   Lu, Toh Ming ^a   Interrante, Leonard V ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Rensselaer Polytechnic Institute   (United States)

^c ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE STRESS; CYCLOLINEAR PRECURSOR POLYMERS; INTERCONNECT TECHNOLOGY; POLYCARBOSILANES;

COPPER; CROSSLINKING; DIFFUSION; INTEGRATED CIRCUITS; IONIZATION; OXIDATION; SILANES;

DIELECTRIC FILMS;

EID: 33644813416     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2167932     Document Type: Article

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