Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node

Microelectronic Engineering

Volumn 87, Issue 3, 2010, Pages 329-332

  Blampey, B ^a   Gallitre, M ^a,b   Farcy, A ^b   Lacrevaz, T ^a   De Rivaz, S ^a   Bermond, C ^a   Flechet B ^a   Jousseaume, V ^c   Zenasni, A ^c   Ancey, P ^b  

^a UNIVERSITÉ DE SAVOIE   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

Characterization; CMOS 32 nm; Complex permittivity; Extraction; High frequencies; Ultra Low K

Indexed keywords

32-NM NODE; COMPLEX PERMITTIVITY; HIGH FREQUENCY; MICROWAVE CHARACTERIZATION; NEW TECHNOLOGIES; POROUS ULK; PROCESS INTEGRATION; ULTRALOW-K;

NANOTECHNOLOGY;

PERMITTIVITY;

EID: 74449088121     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.07.023     Document Type: Article

References (6)

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