Effect of ambient temperature on electrical properties of nanostructure n-ZnO/p-Si heterojunction diode

Superlattices and Microstructures

Volumn 51, Issue 5, 2012, Pages 613-625

  Aksoy, Seval ^a   Caglar, Yasemin ^a  

^a ANADOLU UNIVERSITY   (Turkey)

Author keywords

Current voltage characteristics; Heterojunction semiconductor diode; Ideality factor; Nanostructure; Sol gel; ZnO

Indexed keywords

DIFFRACTION SPECTRA; ELECTRICAL CHARACTERIZATION; HETEROJUNCTION DIODES; IDEALITY FACTORS; ILLUMINATION INTENSITY; POLYCRYSTALLINE; REVERSE CURRENTS; SCANNING ELECTRON MICROSCOPY IMAGE; SERIES RESISTANCES; STRUCTURAL AND MORPHOLOGICAL PROPERTIES; ZNO; ZNO FILMS;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLIC FILMS; NANOSTRUCTURES; OPEN CIRCUIT VOLTAGE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; SILICON; SOL-GEL PROCESS; SOL-GELS; TEMPERATURE; X RAY DIFFRACTION; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84859295587     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2012.02.018     Document Type: Article

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