A study of conduction of ZnO film/p-Si heterojunction fabricated by photoinduced electrodeposition under illumination

Journal of Physics D: Applied Physics

Volumn 43, Issue 36, 2010, Pages

  Lee, Jong Duk ^a   Park, Chang Young ^a   Kim, Hyeon Soo ^a   Lee, Jeoung Ju ^a   Choo, Yeon Gyu ^a  

^a Gyeongsang National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AIR AMBIENT; BARRIER HEIGHTS; CARRIER CAPTURE; DIFFUSION LIMITED; DOPING PROCESS; ELECTRICAL PROPERTY; EMISSION MECHANISM; FORWARD BIAS; GROWTH MODES; INITIAL DEPOSITIONS; IV CHARACTERISTICS; LOW VOLTAGE REGION; MULTI-STEP; P-TYPE; PHOTO-INDUCED; RELATIVE CONCENTRATION; SI (100) SUBSTRATE; SI WAFER; TEMPERATURE DEPENDENCE; THERMAL TREATMENT; TURN ON VOLTAGE; ZNO; ZNO FILMS; ZNO/P-SI;

ACTIVATION ANALYSIS; DISTILLATION; ELECTRIC PROPERTIES; ELECTRODEPOSITION; HETEROJUNCTIONS; METALLIC FILMS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78249267542     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/36/365403     Document Type: Article

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