The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I-V characteristics

Journal of Alloys and Compounds

Volumn 484, Issue 1-2, 2009, Pages 405-409

  Tataroglu A ^a   Altindal, Ş ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Barrier height; I V characteristics; Ideality factor; Interface states; MIS Schottky diodes; Series resistance

Indexed keywords

BARRIER HEIGHT; I-V CHARACTERISTICS; IDEALITY FACTOR; INTERFACE STATES; MIS SCHOTTKY DIODES; SERIES RESISTANCE;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; SEMICONDUCTING SILICON COMPOUNDS; SWITCHING CIRCUITS; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 69949105960     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.04.119     Document Type: Article

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