Optoelectronic properties of CdO/Si photodetectors

Solid-State Electronics

Volumn 44, Issue 10, 2000, Pages 1765-1769

  Ortega, Mauricio ^a   Santana, Guillermo ^b   Morales Acevedo, Arturo ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSITY OF HAVANA   (Cuba)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; PHOTOSENSITIVE GLASS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING CADMIUM COMPOUNDS; SILICON WAFERS; THIN FILMS;

POLYCRYSTALLINE THIN FILMS;

PHOTODETECTORS;

EID: 0034291915     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00123-4     Document Type: Article

References (6)

1. Vossen JL. In: Hass G, Francombe MH, Hoffman RW, editors. Physics of thin solid films. New York: Academic Press; 1977. p. 1.
2. Subrayaman T.K., Radna Krishna B., Uthanna S., Naidu B.S., Reddy P.J. Vacuum 48. 6:1997;565.
3. Jarzberzki ZM. Oxide semiconductors. In: Pamplin BR, editor. London: Pergamon Press; 1973. p. 239.
4. Shukri ZA, Yip LS, Qui CX, Shih I, Champness CH. Technical Digest of the 7th International Science and Engineering Conference. Nagoya, Japan, 1993. p. 409.
5. Shih I., Champness C.H., Liria N. Solar Cells. 7:1982-1983;327.
6. Ortega-López M., Morales-Acevedo A. Revista Mexicana de Física. 42(5):1996;776.