On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes

Microelectronic Engineering

Volumn 85, Issue 2, 2008, Pages 289-294

  Yildiz, D E ^a   Altindal, Ş ^b  

^a Republic of Turkey Prime Ministry   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

C V T and G w V T measurements; Interface states; MIS structure; Series resistance; Temperature dependence

Indexed keywords

CAPACITANCE; HEALTH; METALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SILICON;

C V PLOTS; CAPACITANCE-VOLTAGE (C-V); FORWARD BIAS; INTERFACE STATES; INTERFACIAL LAYER (IFO); PEAK POSITIONS; PEAK VALUES; SCHOTTKY DIODES; SERIES RESISTANCE (ESR); TEMPERATURE DEPENDENCES; WIDE TEMPERATURE RANGE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 47049121734     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.06.015     Document Type: Article

References (30)

1. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Willey, New York
2. Nicollian E.H., and Brews J.R. MOS (Metal Oxide-Semiconductor) Physics and Technology (1982), John Wiley and Sons
3. Crowell C.R., and Sze S.M. J. Appl. Phys. 36 (1965) 3212
4. Card H.C., and Rhoderick E.H. J. Phys. D: Appl. Phys. 4 (1971) 1589
5. Alti{dotless}ndal S., Karadeniz S., Tuǧluoǧlu N., and Tataroǧlu A. Solid State Electron. 47 (2003) 1847
6. Norde H. J. Appl. Phys. 50 (1979) 5052
7. Bülbül M.M., Zeyrek S., Alti{dotless}ndal S., and Yüzer H. Microelectron. Eng. 83 (2006) 577
8. Szatkowski J., and Sieranski K. Solid State Electron. 35 (1992) 1013
9. Nicollian E.H., and Goetzberger A. Bell. Syst. Tech. J 46 (1967) 1055
10. Tataroǧlu A., Alti{dotless}ndal S., and Bülbül M.M. Microelect. Eng. 81 (2005) 140
11. Chattopadhyay P., and Raychaudhuri B. Solid State Elecrton. 35 (1993) 605
12. Dökme I., and Alti{dotless}ndal S. Semicond. Sci. Technol. 21 (2006) 1053
13. Akkal B., Benamara Z., Gruzza B., Bideux L., and Bouiadjra N.B. Mater. Sci. Eng. C 21 (2002) 291
14. Cova P., Singh A., and Masut R.A. J. Appl. Phys. 82 (1997) 5217
15. Konofaos N., and Evangelou E.K. Semicond. Sci. Technol. 18 (2003) 56
16. Sato K., and Yasamura Y. J. Appl. Phys. 58 (1985) 3656
17. Cheung S.K., and Cheung N.W. Appl. Phys. Lett. 49 (1986) 85
18. Depas M., Van Meirhaeghe R.L., Laflere W.H., and Cardon F. Solid State Electron. 37 (1994) 433
19. Depas M., Van Meirhaeghe R.L., Laflere W.H., and Cardon F. Semicond. Sci. Technol. 7 (1992) 1476
20. Green M.A., and Shewchun J. J. Appl. Phys. 46 (1975) 51
21. Castange R., and Vapaile A. Surf. Sci. 28 (1971) 157
22. Kelberlau U., and Kasing R. Solid State Electron. 24 (1981) 873
23. Kuhn M. Solid. State. Electron. 13 (1970) 873
24. Kar S., and Varma S. J. Appl. Phys. 58 (1985) 4256
25. Hill W.A., and Coleman C.C. Solid State Electron. 23 (1980) 987
26. Konofaos N. Microelectron. J. 35 (2004) 421
27. Dakhel A.A. Thin Solid Films 496 (2006) 353
28. Yücedaǧ I., Alti{dotless}ndal S., and Tataroǧlu A. Microelectron. Eng. 84 (2007) 180
29. Karataş S., and Türüt A. Vacuum 74 (2004) 45
30. Kwa K.S.K., Chattopadhyay S., Jankovic N.D., Olsen H.S., Driscoll L.S., and Neil A.G.O. Semicond. Sci. Technol. 18 (2003) 82