Effect of electrodeposition and annealing of ZnO on optical and photovoltaic properties of the p-Cu2O/n-ZnO solar cells

Electrochimica Acta

Volumn 56, Issue 24, 2011, Pages 8342-8346

  Hussain, Sajad ^a   Cao, Chuanbao ^a   Nabi, Ghulam ^a   Khan, Waheed S ^a   Usman, Zahid ^a   Mahmood, Tariq ^a  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Electrodeposition; p Cu2O n ZnO; Photovoltaic cells; Semiconductor; Thin films

Indexed keywords

ANNEALING TEMPERATURES; CRYSTAL FACE; CRYSTALLINITIES; ELECTRICAL CONDUCTANCE; ELECTRODEPOSITION POTENTIAL; FINE TUNING; HETEROJUNCTION SOLAR CELLS; HIGHER EFFICIENCY; INTERBAND; P-CU2O/N-ZNO; P-N HETEROJUNCTIONS; P-N JUNCTION; PHOTOVOLTAIC PROPERTY; RF SPUTTERING DEPOSITION; SEMICONDUCTOR; SOLAR CELL PERFORMANCE; SURFACE STATE; TWO DIMENSIONAL DEFECT; ZNO; ZNO FILMS; ZNO THIN FILM;

ANNEALING; ELECTRODEPOSITION; ELECTRON MOBILITY; HETEROJUNCTIONS; METALLIC FILMS; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR DOPING; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

COPPER;

EID: 80052816097     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2011.07.017     Document Type: Article

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