Effects of oxygen pressure on n-ZnO/p-Si heterojunctions fabricated using pulsed laser deposition

Vacuum

Volumn 81, Issue 8, 2007, Pages 943-946

  Qi, Hongxia ^a   Li, Qingshan ^a   Wang, Caifeng ^a   Zhang, Lichun ^a   Lv, Lei ^a  

^a QUFU NORMAL UNIVERSITY   (China)

Author keywords

Band diagram; n ZnO p Si heterojunction; Pulsed laser deposition

Indexed keywords

FILM GROWTH; PULSED LASER DEPOSITION; SILICON; SURFACE MORPHOLOGY; SYNTHESIS (CHEMICAL); THIN FILMS; ZINC OXIDE;

BAND DIAGRAM; CRYSTALLINITY; OXYGEN PARTIAL PRESSURES; OXYGEN PRESSURE;

HETEROJUNCTIONS;

EID: 33947176538     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.12.005     Document Type: Note

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