Temperature dependence of current-voltage characteristics of Al/p-Si (1 0 0) Schottky barrier diodes

Physica B: Condensed Matter

Volumn 404, Issue 14-15, 2009, Pages 1993-1997

  Yüksel, Ö Faruk ^a  

^a SELCUK UNIVERSITY   (Turkey)

Author keywords

Barrier height; I V characteristics; Ideality factor; Metal semiconductor contact; Schottky barrier diode

Indexed keywords

BARRIER HEIGHT; BARRIER HEIGHTS; CARRIER DENSITY; CONTACT PROPERTIES; I-V CHARACTERISTICS; IDEALITY FACTOR; IDEALITY FACTORS; METAL-SEMICONDUCTOR CONTACT; REVERSE-BIAS; SERIES RESISTANCES; SI(1 0 0); TEMPERATURE DEPENDENCE OF CURRENT; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; ZERO-BIAS;

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 67349156057     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.03.026     Document Type: Article

References (28)

1. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts (1988), Oxford, Clarendon
2. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Wiley, New York
3. Tung R.T. Mater. Sci. Eng. R 35 (2001) 1
4. Şafak H., Şahin M., and Yüksel O.F. Solid-State Electron. 46 (2002) 49
5. Gümüş A., Türüt A., and Yalçi{dotless}n N. J. Appl. Phys. 91 (2002) 245
6. Tuǧluoǧlu N., Yakuphanoglu F., and Karadeniz S. Physica B 393 (2007) 56
7. Yakuphanoǧlu F., Tuǧluoǧlu N., and Karadeniz S. Physica B 392 (2007) 188
8. Tuǧluoǧlu N., Karadeniz S., Şahin M., and Şafak H. Appl. Surf. Sci. 233 (2004) 320
9. Ayyi{dotless}ldi{dotless}z E., Türüt A., Efeoǧlu H., Tüzemen S., Saǧlam M., and Yoǧurtçu Y.K. Solid-State Electron. 39 (1996) 83
10. Tung R.T. Phys. Rev. B 45 (1992) 13509
11. Tung R.T., Sullivan J.P., and Schrey F. Mater. Sci. Eng. B 14 (1992) 266
12. McCafferty P.G., Sellai A., Dawson P., and Elabd H. Solid-State Electron. 39 (1996) 583
13. Chand S., and Kumar J. Appl. Phys. A 63 (1996) 171
14. Chand S. Semicond. Sci. Technol. 17 (2002) L36
15. Padovani F.A., and Summer G. Appl. Phys. A 36 (1965) 3744
16. Chand S., and Kumar J. Semicond. Sci. Technol. 10 (1995) 1680
17. Werner J.H., and Güttler H.H. J. Appl. Phys. 69 (1991) 1522
18. Güttler H.H., and Werner J.H. Appl. Phys. Lett. 56 (1990) 1113
19. Zhu S.Y., Van Meirhaeghe R.L., Detavernier C., Cardon F., Ru G.P., Qu X.P., and Li B.Z. Solid-State Electron 44 (2000) 663
20. Horvath Z.S. Solid-State Electron. 39 (1996) 176
21. Schmitsdorf R.F., Kampen T.U., and Mönch W. Surf. Sci. 324 (1995) 249
22. Mönch W. J. Vac. Sci. Technol. B 17 (1999) 1867
23. Bandyopadhyay S., Bhattacharya A., and Sen S.K. J. Appl. Phys. 85 (1999) 3671
24. Hudait M.K., Venkateswarlu P., and Krupanidhi S.B. Solid-State Electron. 45 (2001) 133
25. Abay B., Çankaya G., Güder H.S., Efeoǧlu H., and Yoǧurtçu Y.K. Semicond. Sci. Technol. 18 (2003) 75
26. Coşkun C., Biber M., and Efeoǧlu H. Appl. Surf. Sci. 211 (2003) 360
27. Cheung S.K., and Cheung N.W. Appl. Phys. Lett. 49 (1986) 85
28. Hanselaer P.L., Laflere W.H., Van Meirhaeghe R.L., and Cardon F. J. Phys. D Appl. Phys. 15 (1982) L7