Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes

Applied Surface Science

Volumn 236, Issue 1-4, 2004, Pages 366-376

  Siad, M ^a   Keffous, A ^b   Mamma, S ^a   Belkacem, Y ^b   Menari, H ^b  

^a CENTRE DE RECHERCHE NUCLÉAIRE D ALGER   (Algeria)

^b L'Unite de Developpement de la Technologie du Silicium   (Algeria)

Author keywords

Ohmic contact; Schottky barrier; Series resistance; Silicon; Spectrometry

Indexed keywords

ALUMINUM; ALUMINUM ALLOYS; CRYSTALS; DIFFUSION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INSULATING MATERIALS; NITRIC ACID; PHOSPHORUS; SEMICONDUCTING SILICON; SPECTROMETRY; SUBSTRATES;

SCHOTTKY BARRIERS; SERIES RESISTANCE; SILICON DIODES; Α SPECTROMETRY;

SCHOTTKY BARRIER DIODES;

EID: 4043160480     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.009     Document Type: Article

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