SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 14, Issue 3-4, 2011, Pages 229-234

Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray

(6) Zebbar, N a Kheireddine, Y a Mokeddem, K a Hafdallah, A b Kechouane, M a Aida, M S b

a UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE (Algeria)

b Universite Mentouri Constantine (Algeria)

Author keywords

Heterojunction; Spray pyrolysis; Thin films; ZnO

Indexed keywords

BUILT-IN POTENTIAL; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; DEPOSITION TEMPERATURES; DIFFRACTION PEAKS; GRAIN SIZE; HETEROJUNCTION STRUCTURES; IDEALITY FACTORS; LOW BIAS VOLTAGE; MULTI-STEP; NANO-CRYSTALLINE STRUCTURES; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL GAP; P-TYPE SI; PREFERENTIAL ORIENTATION; ROOM TEMPERATURE; SATURATION CURRENT; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE; TRANSMITTANCE MEASUREMENTS; TUNNELING CURRENT; ULTRASONIC SPRAY; X-RAY DIFFRACTION MEASUREMENTS; ZNO; ZNO FILMS; ZNO THIN FILM;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; FILM GROWTH; FILM PREPARATION; HETEROJUNCTIONS; METALLIC FILMS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPRAY PYROLYSIS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

OPTICAL FILMS;

EID: 82455192235 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2011.03.001 Document Type: Article

Times cited : (63)

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