High current fast switching n-ZnO/p-Si diode

Journal of Physics D: Applied Physics

Volumn 43, Issue 34, 2010, Pages

  Choi, Young ^a   Lee, Kimoon ^a   Park, C H ^a   Lee, Kwang H ^a   Nam, Jae Woo ^b   Sung, Myung M ^b   Lee, Kyu Min ^a   Sohn, Hyun Chul ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FAST SWITCHING; FILM CONDUCTANCES; FORWARD CURRENTS; HETEROJUNCTION DIODES; HIGH CURRENT DENSITIES; HIGH CURRENTS; NANOMETRES; ON-OFF RATIO; P-N DIODE; REVERSE LEAKAGE CURRENT; REVERSE RECOVERY; SI SUBSTRATES; ZNO; ZNO LAYERS; ZNO/P-SI;

ATOMIC LAYER DEPOSITION; CURRENT DENSITY; HETEROJUNCTIONS; SEMICONDUCTOR DIODES; SILICON; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957129770     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/34/345101     Document Type: Article

References (17)

1. Lee M J et al 2007 Adv. Mater. 19 73-76
2. Lee M J et al 2009 Adv. Funct. Mater. 19 1587-1593
3. Kanemoto K, Oka H, Hisamatsu H, Matsuzawa Y, Kitano Y, Hara T, Hoshina M, Ohmi S and Kato J 2007 ECS Trans. 6 309-313
4. Baek I G et al 2004 IEDM Tech. Digest 587-590
5. Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003 J. Appl. Phys 94 3536-3542
6. Nozik A J 1977 Appl. Phys. Lett. 30 567-569
7. Park K C and Basavaiah S 1970 J. Non-Cryst. Solids 2 284-291
8. Jeong I S, Kim J H and Im S 2003 Appl. Phys. Lett. 83 2946-2948
9. Scharrer M, Wu X, Yamilov A, Cao H and Chang R P H 2005 Appl. Phys. Lett. 86 151113
10. Lim S J, Kwon S and Kim H 2008 Thin Sold Films 516 1523-1528
11. Huby N, Ferrari S, Guziewicz E, Godlewski M and Osinniy V 2008 Appl. Phys. Lett. 92 023502
12. Malvino A and Bates D J 2007 Electronic Principles 7th edn (New York: McGraw-Hill) p 91
13. Malvino A and Bates D J 2007 Electronic Principles 7th edn (New York: McGraw-Hill) pp 171-173
14. Muller R S, Kamins T I and Chan M 2003 Device Electronics for Integrated Circuits 3rd edn (New York: Wiley) pp 231-234
15. Ulgut B and Suzer S 2003 J. Phys. Chem. B 107 2939-2943
16. Choi Y S, Lee J Y, Choi W H, Yeom H W and Im S 2002 Japan. J. Appl. Phys. 41 7357-7358
17. Klaus J W, Sneh O and George S M 1997 Science 278 1934-1936