Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunction

Journal of Applied Physics

Volumn 83, Issue 5, 1998, Pages 2656-2661

  Niraula, Madan ^a   Aoki, Toru ^a   Nakanishi, Yoichiro ^a   Hatanaka, Yoshinori ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000717944     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367028     Document Type: Article

References (29)

1. M. Cuzin, Nucl. Instrum. Methods Phys. Res. A 322, 341 (1992).
2. C. Bovet and E. Rossa, Proceedings in Particle Accelerator Conference, Tsukuba, Japan, 1991, p. 371.
3. Y. Tomita, Y. Hatanaka, T. Takabayashi, and T. Kawai, IEEE Trans. Electron Devices 40, 315 (1993).
4. Y. Tomita, T. Kawai, and Y. Hatanaka, Jpn. J. Appl. Phys., Part 1 32, 1923 (1993).
5. K. Nishitani, R. Okhata, and T. Muirotani, J. Electron. Mater. 12, 619 (1983).
6. H. A. Mar, K. T. Chee, and N. Salansky, Appl. Phys. Lett. 44, 237 (1984).
7. R. N. Bicknell, R. W. Yanka, N. C. Giles, J. F. Schelzina, T. J. Magee, C. Leung, and H. Kawayoshi, Appl. Phys. Lett. 44, 313 (1984).
8. S. Oehling, H. J. Lagauer, M. Schmitt, H. Heinke, U. Zehnder, A. Waag, C. R. Becker, and G. Landwehr, J. Appl. Phys. 79, 2343 (1996).
9. Z. Yu, S. L. Buczkowski, M. C. Petcu, N. C. Giles, and T. H. Myers, J. Electron. Mater. 25, 1247 (1996).
10. N. R. Taskar, I. B. Bhat, J. M. Borrego, and S. K. Ghandhi, J. Electron. Mater. 15, 165 (1986).
11. R. Peng, Y. Ding, G. Wang, and C. Peng, J. Cryst. Growth 103, 380 (1990).
12. K. Yasuda, M. Ekawa, N. Matsui, S. Sone, Y. Sugiura, A. Tanaka, and M. Saji, Jpn. J. Appl. Phys., Part 1 29, 479 (1990).
13. P. D. Brown, J. E. Halls, G. J. Russell, and J. Woods, J. Cryst. Growth 86, 511 (1988).
14. N. V. Sochinskii, V. Munoz, V. Bellani, L. Vina, E. Dieguez, E. Alves, M. F. da Silva, J. C. Soares, and S. Bernardi, Appl. Phys. Lett. 70, 1314 (1997).
15. T. L. Chu, S. S. Chu, C. Ferekides, J. Britt, and C. Q. Woo, J. Appl. Phys. 71, 3870 (1992).
16. W. E. Hoke, P. J. Lemonias, and R. Traczewski, Appl. Phys. Lett. 44, 1046 (1984).
17. Y. Hatanaka, T. Aoki, M. Morita, and Y. Nakanishi, Appl. Surf. Sci. 100/101, 621 (1996).
18. T. Aoki, M. Morita, S. Wickramanayaka, Y. Nakanishi, and Y. Hatanaka, Appl. Surf. Sci. 92, 132 (1996).
19. R. Peng, F. Xu, and Y. Ding, J. Cryst. Growth 115, 698 (1991).
20. P. L. Anderson, J. Vac. Sci. Technol. A 4, 2162 (1986).
21. T. Aoki, M. Morita, Y. Nakanishi, and Y. Hatanaka, Electrochemical Society Proceedings, Vol. 96-5, 1996, p. 354.
22. C. S. Pai and C. P. Chang, J. Appl. Phys. 68, 793 (1990).
23. B. L. Chin and E. P. Vande Ven, Solid State Technol. 31, 119 (1988).
24. G. F. Neumark, B. J. Fitzpatrick, P. M. Harnack, S. P. Herko, K. Kosai, and R. N. Bhargava, J. Electrochem. Soc. 127, 983 (1980).
25. J. M. DePuydt, M. A. Haase, H. Cheng, and J. E. Potts, Appl. Phys. Lett. 55, 1103 (1989).
26. H. Mimura and Y. Hatanaka, J. Appl. Phys. 71, 2315 (1992).
27. H. Matsuura, T. Okuno, H. Okushi, and K. Tanaka, J. Appl. Phys. 55, 1012 (1984).
28. A. M. Cowley and S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
29. H. Mimura and Y. Hatanaka, Jpn. J. Appl. Phys., Part 1 26, 60 (1987).