Synthesis and characterization of zinc oxide nanorods on silicon for the fabrication of p-Si/n-ZnO heterojunction diode

Journal of Alloys and Compounds

Volumn 508, Issue 2, 2010, Pages 375-379

  Badran, R I ^a,b   Umar, Ahmad ^c   Al Heniti, S ^a   Al Hajry, A ^c   Al Harbi, T ^a  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^b HASHEMITE UNIVERSITY   (Jordan)

^c NAJRAN UNIVERSITY   (Saudi Arabia)

Author keywords

Heterojunction diodes; Nanorods; Photoluminescence; ZnO

Indexed keywords

AS-GROWN; HETEROJUNCTION DIODES; HEXAGONAL PHASE; HIGHER TEMPERATURES; IV CHARACTERISTICS; P-N HETEROJUNCTIONS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SERIES RESISTANCES; SILICON SUBSTRATES; STRUCTURAL AND OPTICAL PROPERTIES; SYNTHESIS AND CHARACTERIZATIONS; TURN ON VOLTAGE; WURTZITES; ZINC OXIDE NANORODS; ZINC POWDER; ZNO; ZNO NANOROD; ZNO/P-SI;

FABRICATION; HETEROJUNCTIONS; NANORODS; OXYGEN; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR DIODES; THERMAL EVAPORATION; X RAY DIFFRACTION; ZINC; ZINC OXIDE; ZINC SULFIDE;

OPTICAL PROPERTIES;

EID: 77957862157     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.08.048     Document Type: Article

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