Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Journal of Physics D: Applied Physics

Volumn 41, Issue 3, 2008, Pages

  Li, Xiangping ^a   Zhang, Baolin ^a   Zhu, Huichao ^a   Dong, Xin ^b   Xia, Xiaochuan ^a   Cui, Yongguo ^b   Ma, Yan ^a   Du, Guotong ^a,b  

^a JILIN UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTROLUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SPECTRUM ANALYSIS; ZINC OXIDE;

DEFECT RELATED EMISSION; RECOMBINATION PROCESSES;

HETEROJUNCTIONS;

EID: 43049111782     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/3/035101     Document Type: Article

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