Structural, optical and electrical properties of F-doped ZnO nanorod semiconductor thin films deposited by sol-gel process

Applied Surface Science

Volumn 255, Issue 5 PART 1, 2008, Pages 2353-2359

  Ilican, Saliha ^a   Caglar, Yasemin ^a   Caglar, Mujdat ^a   Yakuphanoglu, Fahrettin ^b  

^a ANADOLU UNIVERSITY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

Author keywords

Electrical properties; Fluorine doped ZnO; Single oscillator model; Sol gel spin coating

Indexed keywords

COATINGS; DISPERSION (WAVES); ELECTRIC PROPERTIES; ENERGY GAP; FLUORINE; GRAIN BOUNDARIES; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; NANORODS; OSCILLATORS (MECHANICAL); OXIDE SEMICONDUCTORS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

FLUORINE-DOPED ZNO; OPTICAL AND ELECTRICAL PROPERTIES; REFRACTIVE INDEX DISPERSION; SCANNING ELECTRON MICROSCOPY IMAGE; SINGLE-OSCILLATOR MODEL; SOL-GEL SPIN COATING; SOL-GEL SPIN COATING METHOD; TEMPERATURE-DEPENDENT CONDUCTIVITY;

FLUORINE COMPOUNDS;

EID: 56949084894     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.111     Document Type: Article

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