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Volumn 13, Issue 3, 2010, Pages 137-140
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ZnO/p-Si heterojunction photodiode by solgel deposition of nanostructure n-ZnO film on p-Si substrate
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Author keywords
Nanostructure; Photodiode; Solgel spin coating; ZnO
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Indexed keywords
BARRIER HEIGHTS;
ELECTRONIC PARAMETERS;
HETEROJUNCTION PHOTODIODES;
IDEAL BEHAVIOR;
IDEALITY FACTORS;
OXIDE LAYER;
PHOTOVOLTAIC PROPERTY;
SI SUBSTRATES;
SOL-GEL DEPOSITION;
SOL-GEL SPIN COATING METHOD;
SOLGEL SPIN COATING;
SURFACE STATE;
ZNO;
ZNO FILMS;
ZNO/P-SI;
COATINGS;
DIODES;
ELECTRIC PROPERTIES;
HETEROJUNCTIONS;
NANOSTRUCTURES;
OPEN CIRCUIT VOLTAGE;
PHOTODIODES;
PHOTOVOLTAIC EFFECTS;
SILICON;
SPIN COATING;
ZINC OXIDE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 79952452427
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2010.05.005 Document Type: Article |
Times cited : (136)
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References (20)
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