Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Journal of Physics D: Applied Physics

Volumn 45, Issue 15, 2012, Pages

  Srivastava, N ^a   He, Guowei ^a   Luxmi, ^a   Mende, P C ^a   Feenstra, R M ^a   Sun, Yugang ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON ATMOSPHERES; DISILANES; GRAPHITIZATION TEMPERATURE; LOW ENERGY ELECTRON MICROSCOPY; SI ATOMS; SUBLIMATION RATES;

ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPY; GRAPHITE; GRAPHITIZATION; MONOLAYERS; MORPHOLOGY; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; SILICON; SILICON CARBIDE; SUBLIMATION;

GRAPHENE;

EID: 84859219622     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/15/154001     Document Type: Article

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