The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics

Solid State Communications

Volumn 149, Issue 47-48, 2009, Pages 2194-2198

  Gu, Gong ^a   Luxmi, ^b   Fisher, P J ^b   Srivastava, N ^b   Feenstra, R M ^b  

^a SARNOFF CORPORATION   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

A. Nanostructures; D. Electronic band structure; D. Electronic transport; Field effect transistors

Indexed keywords

A. NANOSTRUCTURES; CARRIER DENSITY; D. ELECTRONIC BAND STRUCTURE; D. ELECTRONIC TRANSPORT; ELECTRICAL DEVICES; ELECTRICAL TRANSPORT; ELECTRONS AND HOLES; ENERGY BAND STRUCTURE; ENERGY DISPERSIONS; EPITAXIAL GRAPHENE; GRAPHENES; HIGH-K GATE DIELECTRICS; HIGH-MOBILITY FIELD-EFFECT TRANSISTORS; ROOM TEMPERATURE; SEMICLASSICAL MODEL; SUBLINEAR; TRANSISTOR CHARACTERISTICS;

BAND STRUCTURE; CARRIER CONCENTRATION; CARRIER MOBILITY; DISPERSIONS; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHITE; NANOSTRUCTURES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 70350106528     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.09.014     Document Type: Article

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