Growth of monolayer graphene on 8°off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Camara, N ^a,b   Jouault, B ^b   Caboni, A ^a   Jabakhanji, B ^b   Desrat, W ^b   Pausas, E ^a   Consejo, C ^b   Mestres, N ^c   Godignon, P ^a   Camassel, J ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GRAPHENE; FULLY COMPATIBLE; GRAPHENE SHEETS; HIGH CARRIER MOBILITY; HIGH QUALITY; HIGH-TEMPERATURE ANNEALING; MAGNETO-TRANSPORT MEASUREMENT; OFF-AXIS; P-TYPE DOPING; QUANTUM HALL EFFECT; QUANTUM TRANSPORT DEVICES; SIC DEVICES; SIC INDUSTRY;

GRAPHENE; HALL MOBILITY; MONOLAYERS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GALVANOMAGNETIC EFFECTS;

EID: 77956370355     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3480610     Document Type: Article

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