Preparation of atomically flat surfaces on silicon carbide using hydrogen etching

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 308-312

  Ramachandran, V ^a   Brady, M F ^a   Smith, A R ^a   Feenstra, R M ^a   Greve, D W ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Atomic force microscopy (AFM); Hydrogen etching; Silicon carbide (SiC); Surface facets; Surface morphology

Indexed keywords

EID: 0001232479     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0406-7     Document Type: Article

References (12)

1. F.A. Ponce and D P. Bour, Nature 386, 351 (1997).
2. P.G. Neudeck and J.A. Powell, IEEE Electron Dev. Lett. 15, 63 (1994).
3. C. Hallin, A.B. Bakin, F. Owman, P. Martensson, O. Kordina, E. Jansen, Inst. Phys. Conf. Ser. 142 (Bristol: Inst. of Phys., 1996), ch. 3.
4. T.L. Chu and R.B. Campbell, J. Electrochem. Soc. 112, 955 (1965).
5. F. Owman, PhD. Dissertation, Linköping University.
6. J.H. Edgar, J. Mater. Res. 7, 235 (1992).
7. J. Schardt, Ch. Bram, S. Muller, U. Starke, K. Heinz and K. Muller, Surf. Sci. 337, 232 (1995).
8. R.J. Pechman, X.-S. Wang and J.H. Weaver, Phys. Rev. B 52, 11412 (1995).
9. J. Giocondi, G.S. Rohrer, M. Skowronski, V. Balakrishna, G. Augustine, H.M. Hobgood and R.H. Hopkins, J. Cryst. Growth, in press.
10. C. Herring, Phys. Rev. 82, 87 (1951).
11. J.A. Powell, D.J. Larkin and P.B. Abel, J. Electron. Mater. 24, 295 (1995).
12. O. Kordina, C. Hallin, R.C. Glass, A. Henry and E. Janzen, Inst. Phys. Conf. Ser. 137, (Bristol: Inst. of Phys.), ch. 1.