In situ observation of stress relaxation in epitaxial graphene

New Journal of Physics

Volumn 11, Issue , 2009, Pages

  N'Diaye, Alpha T ^a   Van Gastel, Raoul ^b   Martínez Galera, Antonio J ^c   Coraux, Johann ^a,e   Hattab, Hichem ^d   Wall, Dirk ^d   Zu Heringdorf, Frank J Meyer ^d   Hoegen, Michael Horn Von ^d   Gómez Rodríguez, José M ^c   Poelsema, Bene ^b   Busse, Carsten ^a   Michely, Thomas ^a  

^a UNIVERSITY OF COLOGNE   (Germany)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^d UNIVERSITY OF DUISBURG ESSEN   (Germany)

^e LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRONS; SCANNING TUNNELING MICROSCOPY; STRESS RELAXATION; THERMAL EXPANSION;

EPITAXIAL GRAPHENE; HIGH TEMPERATURE; IN-SITU OBSERVATIONS; LOW ENERGY ELECTRON MICROSCOPY; ONE-DIMENSIONAL MODEL; TEMPERATURE CYCLING; THERMAL EXPANSION COEFFICIENTS; WRINKLE FORMATION;

GRAPHENE;

EID: 72149108455     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/11/11/113056     Document Type: Article

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