Current status of self-organized epitaxial graphene ribbons on the c face of 6H-SiC substrates

Journal of Physics D: Applied Physics

Volumn 43, Issue 37, 2010, Pages

  Camara, Nicolas ^a   Tiberj, Antoine ^b   Jouault, Benoit ^b   Caboni, Alessandra ^a   Jabakhanji, Bilal ^b   Mestres, Narcis ^c   Godignon, Philippe ^a   Camassel, Jean ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AFM IMAGE; CURRENT STATUS; DEFECTIVE SITES; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; GRAPHITIC MATERIALS; GROWTH PROCESS; HIGHER TEMPERATURES; MICRO RAMAN SPECTROSCOPY; OPTICAL ABSORPTION; P-TYPE; SELF-ORGANIZED; SIC SUBSTRATES; STAGE OF GROWTH; SUBLIMATION PROCESS; TRANSMISSION EXPERIMENTS; TRANSPORT EXPERIMENTS;

ABSORPTION SPECTROSCOPY; DEFECTS; EXPERIMENTS; GRAPHENE; GRAPHITE; LANDFORMS; POINT DEFECTS; RAMAN SPECTROSCOPY; SILICON CARBIDE; SOIL CONSERVATION; SUBLIMATION; SURFACE RECONSTRUCTION;

SUBSTRATES;

EID: 78249256046     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/37/374011     Document Type: Article

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