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Journal of Electronic Materials

Volumn 39, Issue 12, 2010, Pages 2696-2701

Empirical study of hall bars on few-layer graphene on C-face 4H-SiC

(7) Bolen, M L a Shen, T a Gu, J J a Colby, R a Stach, E A a Ye, P D a Capano, M A a

a PURDUE UNIVERSITY (United States)

Author keywords

atomic force microscopy; Graphene; Hall mobility; Raman spectroscopy; transmission electron microscopy

Indexed keywords

AFM; BLUE SHIFT; CONTRAST VARIATION; DARK-FIELD; ELECTRICAL CHARACTERIZATION; EMPIRICAL STUDIES; EPITAXIAL GRAPHENE; GRAPHENES; GROWTH PRESSURE; HALL BARS; MEASUREMENT TECHNIQUES; MOBILITY VALUE; OUT-OF-PLANE; PEAK POSITION; POSITIVE CORRELATIONS; RAMAN MAPPING; TEM; TOPOGRAPHIC CHANGES; TOPOGRAPHIC FEATURES; TRANSMISSION ELECTRON; WEAK CORRELATION;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; CARRIER CONCENTRATION; GRAPHENE; HALL MOBILITY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

GALVANOMAGNETIC EFFECTS;

EID: 78049529357 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1375-1 Document Type: Conference Paper

Times cited : (12)

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