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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 4, 2010, Pages

Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

(4) Luxmi, a Srivastava, N a Feenstra, R M a Fisher, P J b

a CARNEGIE MELLON UNIVERSITY (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LEVELS; MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; VACUUM;

ARGON ENVIRONMENT; EPITAXIAL GRAPHENE; GRAPHITIC PHASE; HIGH TEMPERATURE; HIGH VACUUM; IN-VACUUM; LAYER-BY-LAYER GROWTH; LOW ENERGY ELECTRON MICROSCOPY; STEP BUNCH; STEP MOTIONS;

GRAPHENE;

EID: 77957239191 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3420393 Document Type: Conference Paper

Times cited : (25)

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