Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction

Nanotechnology

Volumn 23, Issue 15, 2012, Pages

  Chrastina, D ^a   Vanacore, G M ^a,e   Bollani, M ^b   Boye, P ^c   Schoder S ^d,f   Burghammer, M ^d   Sordan, R ^a   Isella, G ^a   Zani, M ^a   Tagliaferri, A ^a  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^f SYNCHROTRON SOLEIL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN RELAXATION; DOWN-SCALING; FULLY COMPATIBLE; LATERAL CONFINEMENT; NANOPATTERNING; PLASTIC RELAXATION; SIGE LAYERS; STRAIN RELIEF; STRAIN STATE; UNI-AXIAL STRAINS;

HETEROJUNCTIONS; NANOWIRES; STRAIN RELAXATION; X RAY DIFFRACTION;

SILICON ALLOYS;

EID: 84859173070     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/15/155702     Document Type: Article

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